R200 Series
The R200 (R200) equipment is designed for remote plasma etching of polymers on wafers up to 200 mm. The equipment complies with SEMI standards and is compatible with 200 mm wafers, standard cassettes, and SMIF containers. The polymer etching speed reaches 11 μm/min, and the process throughput can reach up to 120 wafers/hour.
To generate plasma in the system, an ICP (Inductively Coupled Plasma) source is used. The inductively coupled discharge has a high energy transfer efficiency to the plasma at low electron temperatures compared to microwave discharges and capacitively coupled discharges. This ensures high dissociation efficiency and, consequently, high etching rates.
A gas analyzer based on a fast-response spectrometer is installed in the pumping line. The gas analyzer readings are used to determine the endpoint of etching based on the plasma emission spectrum, which improves productivity and reduces the exposure time to open semiconductor structures after polymer removal.
Technologies and Parameters
Model |
R200 |
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Wafer Holder |
Holder Geometry: 100 / 150 / 200 mm diameter chuck Wafer Geometry: 100 / 150 / 200 mm diameter wafers |
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Main Technologies | Remote Plasma Etching of Polymers | ||
Etching Rate | Up to 11 μm/min | ||
Uniformity |
±3 % |
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Throughput | Up to 120 wafers/hour | ||
Load Port Quantity | 1 or 2 | ||
Heating Temperature | Up to 350 °C | ||
Control Features |
• Time-based control • Composition-based control of the process gas (optional) |
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Special Features |
• Robotic cassette loading • Automatic wafer size detection |
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Power Consumption | Up to 16 kW | ||
Dimensions (HxWxD) | 2100х1400х1900 mm |